![]() ![]() This gives it a lower resistance, increasing conduction and reducing the effect of placing standard N type silicon next to the aluminium connector, which because aluminium is a tri-valent material, having three valence electrons whilst silicon has four, would tend to create an unwanted junction, similar in effect to a PN junction at this point. N+ type silicon has a lower resistivity than N type. The drain is connected to a positive supply, and the source to zero volts. The N type channel is connected to the source and drain terminals via more heavily doped N+ type regions. 4.2.1, the N channel is sandwiched between two P type regions (the gate and the substrate) that are connected together and are at 0V. In the planar construction N channel JFET shown in Fig. Operating with the Drain Source voltage above Pinch Off is known as the "Saturation Region" as the JFET is acting like a saturated transistor that is any increase in voltage does not produce a relative increase in current. Operating with the Drain/Source voltage below this value is classed is the "Ohmic Region" as the JFET will act rather like a resistor. The Pinch-Off value of the JFET refers to the voltage applied between Drain and Source (with the Gate voltage at zero volts) at which maximum current flows. The JFET is a voltage controlled transistor that has two distinct areas of operation depending on the whether the voltage applied to the Source and Drain terminals is greater or less that the transistor's Pinch-Off Voltage The Pinch Off Voltage ![]() The JFET is a Voltage Controlled Transistor. ![]()
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